Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Patent
1997-03-04
1998-06-23
Tsai, Jey
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
438528, 438595, 438306, H01L 2100, H01L 21425
Patent
active
057704856
ABSTRACT:
An amorphized implant is performed to retard diffusion of ions in the source and drain regions. By retarding the diffusion of ions in these regions, a shallower junction is advantageously created in the silicon regions of the wafer. A slight degradation in leakage current is obtained if the amorphized implant is performed on both the source and the drain sides of a transistor. However, since the source region is a low voltage region with a very shallow junction, MOSFETs in both n-channel and p-channel regions are formed with improved performance and reliability. A method of fabricating an integrated circuit includes forming a gate electrode over a semiconductor substrate, forming a source mask extending over the drain region of the semiconductor substrate, and implanting an implant species into the source region of the semiconductor substrate to form an amorphous implant layer of the semiconductor substrate. The semiconductor substrate has a source region adjacent to a first side of the gate electrode and has a drain region adjacent to a second side of the gate electrode. The amorphous implant layer is self-aligned with the source mask and extends through the exposed region of the semiconductor substrate and the source region of the semiconductor substrate. The method further includes the step of implanting a source implant into the exposed region of the semiconductor substrate and the source region of the semiconductor substrate to form a source implant layer of the semiconductor substrate. The source implant layer extends a shallower depth into the semiconductor substrate than the amorphous implant layer.
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Fulford Jr. H. Jim
Gardner Mark I.
Wristers Derick J.
Advanced Micro Devices , Inc.
Koestner Ken J.
Lebentritt Michael S.
Tsai Jey
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