Static information storage and retrieval – Read/write circuit – Including reference or bias voltage generator
Patent
1996-03-29
1997-01-14
Nguyen, Tan T.
Static information storage and retrieval
Read/write circuit
Including reference or bias voltage generator
365210, 36518528, 36518529, 36518901, G11C 700
Patent
active
055946925
ABSTRACT:
An integrated circuit has a built-in EEPROM which utilizes a high voltage to write or erase data. The integrated circuit operates with a lower power supply voltage. Switches supply a high voltage to bit lines, control gate lines, and word lines. Each switch includes a multi-stage charge pump comprising diode-connected transistors and capacitors. The switch has an enhanced charge capability and can transfer a high voltage from a low power supply voltage. Thus, the switch can operate successfully with a low power supply voltage.
REFERENCES:
patent: 5214605 (1993-05-01), Lim et al.
patent: 5313429 (1994-05-01), Chevallier et al.
Mitsubishi Denki & Kabushiki Kaisha
Nguyen Tan T.
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