Active solid-state devices (e.g. – transistors – solid-state diode – Lead frame – With dam or vent for encapsulant
Patent
1996-01-11
1997-01-14
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Lead frame
With dam or vent for encapsulant
257669, 257676, H01L 23495, H01L 2328
Patent
active
055942741
ABSTRACT:
A distance between each two sides adjacent to a first portion X of the outer peripheral portion of an island portion 3 and the inner end of an inner lead portion 4 is set to d.sub.1 while the distance between each two sides adjacent to a second portion Y, which is diagonal to the first portion X, and the inner end of the inner lead portion 4 is set to d.sub.2 (<d.sub.1). The island portion 3 has a portion 2a for placing the semiconductor chip thereon and an overhang portion 3a attached to that portion. A semiconductor chip 2 is adhered on the island portion 3 of the lead frame 10, which is then attached in position within a mold. From a gate 21 a molten resin is injected into the cavity 23 in a diagonal direction of the square island portion, i.e. a direction from the first portion X toward the second portion Y.
REFERENCES:
patent: 5045919 (1991-09-01), Nagaoka
patent: 5134458 (1992-07-01), Tsutsumi et al.
Crane Sara W.
NEC Corporation
Ostrowski David
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