Method for fabricating microbump interconnect for bare semicondu

Semiconductor device manufacturing: process – With measuring or testing – Electrical characteristic sensed

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438613, 438614, 438686, 204123, H01L 2128

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active

057260753

ABSTRACT:
A method for forming an interconnect for a bare semiconductor is provided. The interconnect includes an insulating film with a pattern of conductors and microbumps adapted to make an electrical connection with contact locations on the die. The insulating film and conductors are mounted to a rigid substrate (e.g., silicon) using an lo elastomeric adhesive. The method includes forming conductive bus bars in electrical communication with the pattern of conductors to provide an electrical path for electroplating the microbumps onto the conductors. Following the electroplating step, the bus bars are severed and separate electrical paths are formed to the conductors. The bus bar can also be used in the completed interconnect to provide a common electrical path to select conductors. The interconnect can be used for testing the die or for providing a permanent electrical connection to the die.

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