Semiconductor memory device constituted by single transistor typ

Details Semiconductor memory device constituted by single transistor typ Semiconductor memory device constituted by single transistor typ

1995-04-17

1997-05-13

Loke, Steven H.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257315, H01L 29788

Patent

active

056295413

ABSTRACT:
A semiconductor integrated device having a non-volatile memory element or memory cell of a single-element type in a non-volatile memory circuit employing a field effect transistor which has, in addition to a floating gate electrode for storage of information and a controlling gate electrode, a source which includes a heavily doped region having a depth into the semiconductor substrate extending from the major surface thereof which is large. The single-element type field effect transistor, furthermore, has a drain which includes a lightly doped region which has a depth extending into the semiconductor substrate from the major surface thereof which is small.

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IEEE Sponsered IEDM87 publication article entitled "A Flash-Erase EEPROM Cell with an Asymmetric Source and Drain Structure", by H. Kume, et al., IEDM 1987, 25.8, pp. 560-563.

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