Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1995-03-29
1999-06-29
Bowers, Charles
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438785, 438791, H01L 21318
Patent
active
059181478
ABSTRACT:
Antireflective layers (54, 86, and 109) have been developed that have discrete portions (541, 542, 861, 862, 863, 1091, and 1092). The discrete portions (541, 542, 861, 862, 863, 1091, and 1092) allow the antireflective layers (54, 86, and 109) to be used in many instances where using a single layer of uniform composition would be difficult or impossible. Alternatively, a single antireflective layer with a continuously graded composition can be used.
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Filipiak Stanley M.
Lin Jung-Hui
Ong T. P.
Paulson Wayne M.
Roman Bernard J.
Bowers Charles
Meyer George R.
Motorola Inc.
Whipple Matthew
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