Method of forming a microelectronic device incorporating low res

Details Method of forming a microelectronic device incorporating low res Method of forming a microelectronic device incorporating low res

1995-06-07

1999-06-29

Niebling, John F.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438682, 438649, H01L2113205, H01L 21324

Patent

active

059181451

ABSTRACT:
A microelectronic device (10) provides decreased use of bar area to form contacts between a conductive strap (24) or interconnect and subsequent levels. The conductive strap comprises a conducting layer (130) and an overlying semiconducting layer (132). Connection to subsequent levels is made generally overlying substrate conductive areas such as a gate (14) and/or a moat (16). Connection to conductive sublayer (130) is accomplished by doping an overlying semiconductor sublayer (132). Any counter-doping of substrate conductive areas is blocked by an overlying well of dopant-masking (33) or sufficiently thick semiconducting (32) material.

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patent: 5378654 (1995-01-01), Hsue

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