Method of manufacture of semiconductor device

Details Method of manufacture of semiconductor device Method of manufacture of semiconductor device

1995-07-25

1997-05-13

Niebling, John

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438661, 438622, H01L 21205

Patent

active

056292368

ABSTRACT:
The method of manufacturing a semiconductor device, according to the present invention, includes the steps of forming a polycrystal lower-level Al wiring layer on a silicon substrate, forming an interlayer insulation film for covering the lower-level Al wiring layer on the entire surface, forming a connection hole which reaches the lower-level Al wiring layer in the interlayer insulation film, forming a polycrystal upper-level Al wiring layer on a surface of the interlayer insulation film, forming an interlayer insulation film for covering the upper-level Al wiring layer on the entire surface, and forming a single-crystal lower-level Al wiring layer and upper-layer Al wiring layer which are connected to each other in the connection hole by heating the silicon substrate so that the lower-level Al wiring layer and the upper-level Al wiring layer are converted from a polycrystal phase to an amorphous phase, and then cooling the silicon substrate so that the upper-level Al wiring layer is set in a supercooling state.

REFERENCES:
patent: 5187561 (1993-02-01), Hasunuma et al.
patent: 5250468 (1993-10-01), Matsuura et al.
patent: 5354711 (1994-10-01), Heitzmann et al.
patent: 5372971 (1994-12-01), Kang et al.
patent: 5409862 (1995-04-01), Wada et al.
patent: 5424246 (1995-06-01), Matsuo et al.
Japanese Journal of Applied Physics, vol. 32, No. 6B, pp. 3094-3098, 1993, J. Wada, et al., "Formation of Single-Crystal Al Interconnection by In Situ Annealing".
Proc. IEEE Int. Reliability Physics Symposium, 1993, J. Wada, et al., "New Method of Making Al Single Crystal Interconnections on Amorphous Insulators", 6 pages.

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