Method of epitaxially growing compound semiconductor materials

Details Method of epitaxially growing compound semiconductor materials Method of epitaxially growing compound semiconductor materials

1987-06-08

1990-01-02

Straub, Gary P.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156610, 156613, C30B 2502

Patent

active

048910910

ABSTRACT:
Method of MOVPE growing a compound semiconductor material, for example GaAs, on a substrate, for example Si. Sodium ions are first introduced onto the substrate surface as by immersing it in a cleaning solution containing sodium. A two-step MOVPE process is then employed to grow device quality single crystal compound semiconductor material on the surface of the substrate.

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