Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Patent
1998-07-17
1999-06-29
Whitehead, Jr., Carl
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
257762, 257741, 257766, 257904, 257379, 257382, 257576, H01L 2348, H01L 2352, H01L 2940
Patent
active
059172444
ABSTRACT:
A method for fabricating a copper containing integrated circuit structure within an integrated circuit, and the copper containing integrated circuit structure formed through the method. There is first provided a substrate layer. There is then formed through a first electroless plating method a nickel containing conductor layer over the substrate layer. There is then activated the nickel containing conductor layer to form an activated nickel surface of the nickel containing conductor layer. Finally, there is then formed through a second electroless plating method a copper containing conductor layer upon the nickel containing conductor layer. Optionally, there may be formed a polysilicon layer over the substrate prior to forming the nickel containing conductor layer over the substrate, where the nickel containing conductor layer is formed upon the polysilicon layer. Optionally, there may also be formed a second nickel containing conductor layer upon the copper containing conductor layer. The method is useful in forming copper containing integrated circuit inductor structures within integrated circuits.
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Huang Tzuen-Hsi
Lee Chwan-Ying
Ackerman Stephen B.
Industrial Technology Research Institute
Jr. Carl Whitehead
Saile George O.
Szecsy Alek P.
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