Semiconductor device having salicide layer

Details Semiconductor device having salicide layer Semiconductor device having salicide layer

1996-12-04

1999-06-29

Jackson, Jr., Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257377, 257382, 257413, 257576, H01L 2978, H01L 2945

Patent

active

059172231

ABSTRACT:
A semiconductor device has a metal silicide on silicon conductor formed using a salicide process. The metal silicide layer of the conductor includes boron which improves the morphology and conductivity of the metal silicide layer. Implanting boron into the metal silicide layer or the metal to be silicided prevents the metal silicide from aggregating during a subsequent annealing or other heating process. This process allows narrower conductors to be formed without undesirable increases in the resistance of the metal silicide layer. The boron incorporating salicide process is compatible with CMOS processes.

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