MOS semiconductor memory device having stack capacitor with meta

Details MOS semiconductor memory device having stack capacitor with meta MOS semiconductor memory device having stack capacitor with meta

1993-08-10

1994-10-25

Limanek, Robert

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257383, 257752, 257297, H01L 2710

Patent

active

053592174

ABSTRACT:
A semiconductor memory device comprising a semiconductor substrate, a MOS transistor formed on the semiconductor substrate and having source and drain diffused layers and a gate, an interlayer insulating film covering the MOS transistor, a contact hole formed in the interlayer insulating film so as to reach one of the source and the drain diffused layers, a metallic layer filling up the contact hole and a capacitor formed on the interlayer insulating film and connected electrically to the one diffused layer through the metallic layer.

REFERENCES:
patent: 4970564 (1990-11-01), Kimura et al.
patent: 4994893 (1991-02-01), Ozaki et al.
patent: 5143861 (1992-09-01), Turner

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