Static-random-access memory cell with channel stops having diffe

Details Static-random-access memory cell with channel stops having diffe Static-random-access memory cell with channel stops having diffe

1994-11-17

1995-12-05

Limanek, Robert P.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257509, 257903, H01L 2978

Patent

active

054731852

ABSTRACT:
An SRAM cell is formed such that pass channel-stop regions, which are adjacent to the pass transistors, have a higher doping concentration compared to the latch channel-stop regions that are adjacent to the latch transistors. In one embodiment, the pass channel-stop regions are formed using two channel-stop doping steps, whereas the latch channel-stop regions are formed during only one channel-stop doping step. The doping steps may be performed before or after field isolation is formed. The higher doping concentration causes the dopant from the pass channel-stop regions to extend laterally further from the edge of the field isolation compared to the latch channel-stop regions. The process can be adapted for use in almost any type of field isolation process.

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Ohkubo, et al.; "16Mbit SRAM Cell Technologies for 2.0V Operation;" IEDM; pp. 481-484 (1991).
Tseng, et al.; "Advantages of CVD Stacked Gate Oxide For Robust 0.5.mu.m Transistors;" IEDM '91; pp. 75-78 (1991).

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