Semiconductor device

Details Semiconductor device Semiconductor device

1994-08-08

1995-12-05

Carroll, J.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257360, 257361, 257362, 257560, H01L 2906

Patent

active

054731828

ABSTRACT:
A semiconductor device has protective devices formed in a P-type semiconductive region maintained at a ground potential and disposed adjacent to bonding pads connected to internal circuitry through respective signal lines. A plurality of first N+ diffusion regions connected to respective signal lines and a second diffusion region connected to a ground line are disposed in the P-type semiconductive region. A separating region having a thick insulating layer is disposed between the first diffusion regions and the second diffusion region. The protective devices formed as NPN transistors have a common emitter at the second N+ diffusion region, which has enough area for storing and discharging electric charges to the ground, while the occupied area of the protective devices is maintained small. The protective devices can be formed as so-called field MOS transistors having a common source.

REFERENCES:
patent: T934009 (1975-05-01), Sheng

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