Method of manufacturing a semiconductor device

Details Method of manufacturing a semiconductor device Method of manufacturing a semiconductor device

1981-07-09

1983-02-22

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 156657, 204192E, 252 791, B44C 122, C03C 1500, C03C 2506

Patent

active

043746985

ABSTRACT:
A method of manufacturing a semiconductor device in which layers of silicon nitride and silicon oxide are etched by bringing the layers into contact with constituents of a plasma which is formed in a gas mixture which contains a fluoride compound and an oxygen compound. By addition of from 1 to 15% by volume of a gaseous compound which contains a halogen other than fluoride to the gas mixture, silicon nitride layers can be etched away at least five times faster than silicon oxide layers. The method is thus suitable in practice, for example, for manufacturing a silicon nitride mask for the formation of a field oxide in LOCOS processes.

REFERENCES:
patent: 4174251 (1979-11-01), Paschke
patent: 4226665 (1980-10-01), Mogab

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