Method of etching silicon nitride

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

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252 793, H01L 2100

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active

054725623

ABSTRACT:
Etch baths having phosphoric acid, nitric acid and hydrofluoric acid and used to selectively remove silicon nitride or silicon with respect to silicon oxide have enhanced initial selectivity when silicon is added to the initial bath. The silicon may be added in the form of soluble silicon compounds such a hexafluorosilicic acid or ammonium fluorosilicate.

REFERENCES:
patent: 5310457 (1994-05-01), Ziger
patent: 5348617 (1994-09-01), Braymen

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