Proximity-type microlithography apparatus and method

Details Proximity-type microlithography apparatus and method Proximity-type microlithography apparatus and method

1997-04-17

1999-04-06

Powell, William

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

216 66, 355 66, 355 67, 438942, H01L 2100

Patent

active

058918060

ABSTRACT:
Apparatus and methods are disclosed for increasing the illuminance at a mask used for proximity-type microlithography and for achieving increases in throughput. A mask defining a pattern is illuminated by an illumination optical system. The pattern is transferred to a workpiece separated from the mask by a prescribed standoff. The mask and workpiece can be relatively moved in a scan direction. With respect to the illumination optical system, the workpiece-side numerical aperture in a first direction on the plane of the mask is different from the workpiece-side numerical aperture in a second direction, perpendicular to the first direction, on the plane of the mask. A reflective-type relay optical system can be included that comprises first and second spherical mirrors that do not produce chromatic aberrations.

REFERENCES:
patent: 4294538 (1981-10-01), Ban
patent: 5425848 (1995-06-01), Haisma et al.
patent: 5759423 (1998-06-01), Sohda et al.

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