Method of forming contacts

Details Method of forming contacts Method of forming contacts

1996-12-13

1999-04-06

Kunemund, Robert

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

438596, 438633, 438639, H01L 21302

Patent

active

058918051

ABSTRACT:
A method of forming a contact is disclosed. A substrate having a desired electrical contact location is provided. The substrate has a conductive layer. A first mask with an edge over the desired electrical contact location is formed on the substrate. A contact material is deposited over the first mask and the substrate. A first portion of the contact material is then removed such that a second portion of the contact material remains to form a contact adjacent to the edge of the mask, over the desired electrical contact location.

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Horstmann, J.T., et al.; "Characterization of Sub-100 nm-MIS-Transistors Processed by Optical Lithography and a Sidewall-Etchback Technique"; Micro-and Nano-Engineering 95; Aix En Provence, France; Sep. 26-28, 1995; Section P1.
M. Bohr; "Interconnect Scaling--The Real Limiter to High Performance ULSI"; IEDM Proc.; 1995; pp. 241-243.

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