Laser processing apparatus and laser processing process

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

438160, 438162, 438166, H01L 2100, H01L 2184

Patent

active

058917640

ABSTRACT:
A laser processing process which comprises laser annealing a silicon film 2 .mu.m or less in thickness by irradiating a laser beam 400 nm or less in wavelength and being operated in pulsed mode with a pulse width of 50 nsec or more, and preferably, 100 nsec or more.
A laser processing apparatus which comprises a laser generation device and a stage for mounting thereon a sample provided separately from said device, to thereby prevent transfer of vibration attributed to the movement of the stage to the laser generation device and the optical system. A stable laser beam can be obtained to thereby improve productivity.

REFERENCES:
patent: 3848104 (1974-11-01), Locke
patent: 4046618 (1977-09-01), Chaudhari et al.
patent: 4059461 (1977-11-01), Fan et al.
patent: 4083272 (1978-04-01), Miller
patent: 4160263 (1979-07-01), Christy et al.
patent: 4234358 (1980-11-01), Celler et al.
patent: 4249960 (1981-02-01), Schnable et al.
patent: 4309225 (1982-01-01), Fan et al.
patent: 4328553 (1982-05-01), Fredrikson et al.
patent: 4341569 (1982-07-01), Yaron et al.
patent: 4370175 (1983-01-01), Levatter
patent: 4439245 (1984-03-01), Wu
patent: 4463028 (1984-07-01), Laude
patent: 4468551 (1984-08-01), Neiheisel
patent: 4469551 (1984-09-01), Laude
patent: 4545823 (1985-10-01), Drowley
patent: 4734550 (1988-03-01), Imamura et al.
patent: 4764485 (1988-08-01), Loughran et al.
patent: 4803528 (1989-02-01), Pankove
patent: 4835704 (1989-05-01), Eichelberger et al.
patent: 4862227 (1989-08-01), Tsuge et al.
patent: 4937618 (1990-06-01), Ayata et al.
patent: 4956539 (1990-09-01), Uesugi et al.
patent: 4970366 (1990-11-01), Imatou et al.
patent: 5217921 (1993-06-01), Kaido et al.
patent: 5219786 (1993-06-01), Noguchi et al.
patent: 5221365 (1993-06-01), Noguchi et al.
patent: 5313078 (1994-05-01), Yamazaki et al.
patent: 5352291 (1994-10-01), Zhang et al.
patent: 5372836 (1994-12-01), Imahashi et al.
patent: 5413958 (1995-05-01), Imahashi et al.
patent: 5424244 (1995-06-01), Zhang et al.
patent: 5477073 (1995-12-01), Wakai et al.
patent: 5561081 (1996-10-01), Takenuchi et al.
patent: 5578520 (1996-11-01), Zhang et al.
patent: 5612251 (1997-03-01), Lee
patent: 5622814 (1997-04-01), Miyata et al.
patent: 5648277 (1997-07-01), Zhang et al.
patent: 5696003 (1997-12-01), Makita et al.
patent: 5712191 (1998-01-01), Nkajima et al.
patent: 5756364 (1998-05-01), Tanaka et al.
"Laser Annealing of Semiconductors", J.M. Poate (ed.) Epitaxy by Pulsed Annealing of Io-Implanted Silicon, Foti et al., (1982) Academic Press, pp. 203-245. Month unknown.
Young et al., "Effect of Pulse Duration on the Annealing of Ion Implanted Silicon With a XeCl Excimer Laser and Solar Cells", in Laser-Solid Interactions and Transient Thermal Processing of Materials, 1983, pp. 401-406. Month unknown.
Biegelsen et al., "Laser-Induced Crystallization of Silicon on Bulk Amorphous Substracts : An Overview" in Laser-Solid Interactions and Transient Thermal Processing of Materials, 1983, pp. 537-548. Month unknown.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Laser processing apparatus and laser processing process does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Laser processing apparatus and laser processing process, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Laser processing apparatus and laser processing process will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1371011

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.