Electrostatic protective device and method for fabricating same

Details Electrostatic protective device and method for fabricating same Electrostatic protective device and method for fabricating same

1997-07-25

1999-06-29

Arbes, Carl J.

Metal working

Method of mechanical manufacture

Electrical device making

294267, 29830, 257522, 257713, H01K 310

Patent

active

059157577

ABSTRACT:
Provided is an electrostatic protective device which is highly effective in protecting relatively vulnerable devices such as IC's and LSI's from electrostatic damages, and a method for fabricating an electrostatic protective device which can simplify the structure as compared with the conventional devices sealed in a glass container, and can reduce the size and cost of the device. The chip type electrostatic protective device comprises an inner insulating layer made of organic resin material and provided with a plurality of holes for defining air gaps, a pair of outer insulating layers placed on both sides of the inner insulating layer, and circuit segments defining a discharge gap in each of the air gaps. Holes for interconnection are formed in the laminated assembly, and the interior of each of the holes is turned electroconductive. The assembly is then cut apart into individual chip type electrostatic protective devices by cutting through each of the holes for interconnection so as to define terminals for interconnection.

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W. den Boer, "Threshold switching in Hydrogenated Amorphous Silicon," Appl. Phys. Letter 40(9):812-813 (May 1, 1982).

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