Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step
Patent
1993-12-30
1995-12-26
Powel, William
Adhesive bonding and miscellaneous chemical manufacture
Delaminating processes adapted for specified product
Delaminating in preparation for post processing recycling step
1566511, 15666111, 1566621, H01L 2100
Patent
active
054784387
ABSTRACT:
A method of performing anisotropic etching more than once with respect to a semiconductor substrate (1) is provided with the steps of performing first-time anisotropic etching by using a first etching mask (2) so as to form a first anisotropically etched region (4) which is hollow, forming a second etching mask (7) over the first etching mask (2), performing second-time anisotropic etching by using the second etching mask (7), and previously forming the first etching mask (2) from a material which is resistant to an etchant used for patterning the second etching mask (7) before the first-time anisotropic etching is performed. Thus, the edge portion (6) of the first etched region (4) is protected so that its configuration is excellently maintained. By way of example, either of the etching masks is composed of a dielectric material such as a silicon dioxide film, while the other etching mask is composed of a metallic material such as Au and Ti, and the second-time anisotropic etching is performed by using diluted potassium hydroxide.
REFERENCES:
patent: 5277755 (1994-01-01), O'Neill
patent: 5316618 (1994-05-01), Van Lintel
Nagai Hideo
Nakanishi Hideyuki
Ueno Akira
Yoshikawa Akio
Matsushita Electronics Corporation
Powel William
LandOfFree
Method of etching semiconductor substrate does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of etching semiconductor substrate, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of etching semiconductor substrate will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1366325