Process and apparatus for ashing treatment

Details Process and apparatus for ashing treatment Process and apparatus for ashing treatment

1994-12-27

1995-12-26

Dang, Thi

Cleaning and liquid contact with solids

Processes

Including application of electrical radiant or wave energy...

216 69, 1566431, H05H 100

Patent

active

054784034

ABSTRACT:
A process and apparatus for the ashing treatment in which a plasma generated by activating a gas containing at least oxygen is applied to a material to be treated, on which a coating film of an organic is formed, through a plasma-transmitting plate for capturing charged particles in the plasma and allowing the transmission of neutral active species, to thereby ash the coating film of the organic substance. The material to be treated is placed at a position at which charged particles of a high energy, which have been transmitted through the plasma-transmitting plate without being captured by the plasma-transmitting plate, impinge thereon together with the neutral active species which have been transmitted through the plasma-transmitting plate. Also, the ashing treatment process and apparatus includes a distance-adjusting device for adjusting the distance between the plasma-transmitting plate and the material to be treated, by changing the position of the material to be treated.

REFERENCES:
patent: 4563240 (1986-01-01), Shibata et al.
patent: 4767496 (1988-08-01), Hieber
patent: 4845053 (1989-07-01), Zajac
Chiharu Takahashi et al., "An electron cyclotron resonance plasma deposition technique employing magnetron mode sputtering", Journal of Vacuum Science & Technology, vol. 6, No. 4 (second series), Jul./Aug. 1988, Woodbury, N.Y., pp. 2348-2352.
European Search Report conducted at The Hague by Examiner M. Sinemus and completed Jan. 3, 1990.

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