Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Patent
1994-06-10
1996-02-20
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
257530, 257758, 257763, 257774, H01L 2348, H01L 2944, H01L 2952, H01L 2960
Patent
active
054931444
ABSTRACT:
A method is provided for forming a field programmable device of a semiconductor integrated circuit, and an integrated circuit formed according to the same. A first conductive layer is formed. A first, fusible, dielectric layer is formed over the first conductive layer. The dielectric layer is patterned and etched to form a plurality of dielectric regions exposing portions of the first conductive layer. A second dielectric layer is then formed over the dielectric regions and the exposed portions of the first conductive layer. A plurality of contact openings through the second dielectric layer are formed to expose portions of the first conductive layer and portions of the dielectric regions. A second conductive layer is then formed over the second dielectric layer and in the contact openings.
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Liu et al., "Scaled Dielectric Antifuse Structure for Field-Programmable Gate Array Applications," IEEE Electron Device Letters, vol. 12, No. 4, Apr. 1991, New York, U.S.A. pp. 151-153.
Bryant Frank R.
Chen Fusen E.
Dixit Girish A.
Groover Robert
Hill Kenneth C.
Jorgenson Lisa K.
Mintel William
SGS-Thomson Microelectronics Inc.
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