Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Radiation sensitive composition or product or process of making
Patent
1994-05-11
1996-02-20
Chapman, Mark
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Radiation sensitive composition or product or process of making
430914, 522 15, 522 25, 522 31, 522 32, G03C 1492
Patent
active
054927935
ABSTRACT:
The present invention relates to an improved chemically amplified photoresist composition comprising (i) a photosensitive acid generator and (ii) a polymer comprising the reaction product of hydroxystyrene with acrylate, methacrylate or a mixture of acrylate and methacrylate.
REFERENCES:
patent: 4430419 (1984-02-01), Harada
patent: 4476217 (1984-10-01), Douglas et al.
patent: 4491628 (1985-01-01), Ito et al.
patent: 4608281 (1986-08-01), Deckman et al.
patent: 4618564 (1986-10-01), Demmer et al.
patent: 4777119 (1988-10-01), Brault et al.
patent: 4824763 (1989-04-01), Lee
patent: 4840876 (1989-06-01), Arai
patent: 4842992 (1989-06-01), Arai
patent: 4845143 (1989-07-01), Ito et al.
patent: 4869996 (1989-11-01), McCartin et al.
patent: 4883740 (1989-11-01), Schwalm
patent: 4897337 (1990-01-01), Kato et al.
patent: 4912173 (1990-03-01), Keene et al.
patent: 4931379 (1990-06-01), Brunsvold et al.
patent: 4939070 (1990-07-01), Brunsvold et al.
patent: 4962147 (1990-10-01), Vicari
patent: 4980264 (1990-12-01), Ghiong et al.
patent: 5024922 (1991-06-01), Moss et al.
patent: 5071730 (1991-12-01), Allen et al.
patent: 5164278 (1992-11-01), Bruasvold et al.
"Synthesis of Deep UV Grade Polyhydroxystyrene", IBM Technical Disclosure Bulletin, vol. 33, No. 5, Oct. 1990, p. 296.
Nicholas K. Eib et al, "Characterization and Simulation of Acid Catalyzed DUV Positive Photoresist", SPIE, vol. 1925, pp. 186-194.
John Sturtevant et al., "Post-exposure Bake Characteristics of a Chemically Amplified Deep-ultraviolet Resist", SPIE, vol. 1672, 1992, pp. 114-124.
Abstract of European Patent Application EP38834A filed Sep. 19, 1990 by Brunsvold et al.
Abstract of European Patent Applicaion EP366590A filed May 2, 1990 by Merritt et al.
Yeh et al., "A Percolation View of Novolak Dissolution and Dissolution Inhibition", Macromolecules, 1992, 25, 5345-5352.
Reck et al., "Novel Photoresist Design Based on Electrophilic Aromatic Substitution", Polymer Engineering and Science, Jul. 1989, vol. 29, No. 14.
O. Nalamasu et al., "An Overview of Resist Processing for Deep-UV Lithography", Journal of Photopolymer Sci. & Tech., vol. 4, No. 3, pp. 299-318. 1991.
L. Schlegel et al., "Determination of Acid Diffusion in Chemical Amplification Positive Deep Ultraviolet Resists", J. Vac. Sci. Technol. B9 (2), Mar./Apr. 1991, pp. 278-289.
H. Ito et al., "Copolymer Approach to Design of Sensitive Deep-UV Resist Systems with High Thermal Stability and Dry Etch Resistance", American Chemical Society, 1989.
O. Nalamasu et al., "Preliminary Lithographic Characteristics of an All-organic Chemically Amplified Resist Formulation for Single Layer Deep-UV Lithography", SPIE vol. 1466, Advances in Resist Technology and Processing VIII (1991).
F. Houlihan et al., "An Evaluation of Nitrobenzyl Ester Chemistry for Chemical Amplification Resists", SPIE vol. 920 Advances in Resist Technology and Processing V (1988).
D. McKean et al., "Novolac Based Deep-UV Resists", SPIE vol. 920 Advances in Resist Technology and Processing V (1988).
O. Nalamasu et al., "Development of a Chemically Amplified Positive (CAMP) Resist Material for Single Layer Deep-UV Lithography", SPIE vol. 1262 Advances in Resist Technology and Processing VII (1990).
M. Murata et al., "An Aqueous Base Developable Novel Deep-UV Resist for KrF Excimer Laser Lithography", SPIE vol. 1262 Advances in Resist Technology and Processing VII (1990).
W. Feely, "Microplastic Structures", SPIE vol. 631 Advances in Resist Technology and Processing III (1986).
L. Schlegel et al., "Diffusion of Photogenerated Acid in Chemical Amplificaiton Positive Deep UV Resists", Journal of Photopolymer Sci. and Technol. vol. 4, No. 3 (1991) pp. 455.varies.462.
D. Conlon et al., "Synthesis, Characterization, and Deblocking of Poly(4-tert-butoxystyrene) and Poly(4-tert-butoxy-.alpha.-methlstyrene)", American Chemical Society (1989).
N. Hayashi et al., "Tetrahydropyranyl and Tetrahydrofuranyl Protected Polyhydroxystyrenes in Chemical Amplification Resist Systems for KrF Excimer Laser Lithography", Central Research Laboratory, Hitachi Ltd., Kokubunji, Tokyo, Japan.
R. Schwalm, "Success: A Novel Concept Regarding Photoactive Compounds", BASF AG, D-6700 Ludwigshafen.
L. Schlegel et al., "Acid Formation and Deprotection Reaction by Novel Sulfonates in a Chemical Amplification Positive Photoresist", American Chemical Society, (1990).
K. Sugita et al., "Performance Conrol of Positive-Working Electron Beam Resists by Copolymerization and Blending", Polymer Journal, vol. 17, No. 10, pp. 1091-1103 (1985).
H. Ito et al., "Applications of Photoinitiators to the Design of Resists for Semiconductor Manufacturing", American Chemical Society, 1984.
H. Ito, "Solid-State Thermolysis of Poly(p-t-Butoxycarbonyloxystyrene) Catalyzed by Polymeric Phenol: Effect of Phase Separation", Journal of Polymer Science: Part A Polymer Chemistry Edition, vol. 2, pp. 2971-2980 (1986).
J. Nakamura et al., "Effect of Acid Diffusion on Resolution of a Chemically Amplified Resist in X-Ray Lithography", Japanese Journal of Applied Physics, vol. 30, No. 10, Oct., 1991, pp. 2619-2625.
W. Brunsvold et al., "Polyhydroxystyrene Carbonate Esters for High Sensistivity Photoresists Having Autodecomposition Temperatures>160.degree.", SPIE vol. 1086 Advances in Resist Technology and Processing VI (1989).
H. Ito et al., "Positive/Negative Mid UV Resists with High Thermal Stability", SPIE vol. 771, Advances in Resist Technology and Processing IV (1987).
H. Ito et al., "Thermolysis and Photochemical Acidolysis of Selected Polymethacrylates", American Chemical, Society 1988.
V. Sharma et al, "Copolymer Electron Resists: Poly(styrene-methyl methacrylate) Copolymers", Polymer, 1983, vol. 24, Apr.
H. Ito et al., "Chain Scission Efficiency and Reactive-Ion Etch Resistance of Alternating Copolymers of Styrene and Olefins Trisubstituted or Tetrasubstituted with Electron-Withdrawing Groups", Journal of Polymer Science: Part A: Polymer Chemistry, vol. 24, 955-964 (1986).
MacDonald et al., "Airborne Chemical Contamination of a Chemically Amplified Resist", SPIE vol. 1466, Advances in Resist Technology and Processing VIII (1991).
Breyta Gregory
Ito Hiroshi
Knors Christopher J.
Sooriyakumaran Ratnam
Chapman Mark
International Business Machines - Corporation
Martin Robert B.
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