Process for forming an intermetallic layer

Fishing – trapping – and vermin destroying

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437194, 437245, 437246, H01L 2144

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053589017

ABSTRACT:
The present invention includes a process for forming an intermetallic layer and a device formed by the process. The process includes a reaction step where a metal-containing layer reacts with a metal-containing gas, wherein the metals of the layer and gas are different. In one embodiment of the present invention, titanium aluminide may be formed on the sides of an interconnect. The process may be performed in a variety of equipment, such as a furnace, a rapid thermal processor, a plasma etcher, and a sputter deposition machine. The reaction to form the intermetallic layer is typically performed while the substrate is at a temperature no more than 700 degrees Celsius.

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Lee, et al.; "Roles of Ti-Intermetallic Compound Layers on the Electromigration Resistance of Al-Cu Interconnecting Stripes"; J. Appl. Phys.; vol. 71, No. 12, pp. 5877-5887 (Jun. 15, 1992).
Rodbell, et al.; "Electromigration Behavior In Layered Ti/AlCu/Ti Films And Its Dependence On Intermetallic Structure"; Mat. Res. Soc. Symp. Proc.; vol. 225; pp. 91-97 (1991).
Towner; "The Importance of the Short-Circuit Failure Mode in Aluminum Electromigration"; J. Vac. Sci. Technol.; vol. B5, No. 6, pp. 1696-1700 (1987).
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