Method of forming mist type dynamic random access memory cell

Details Method of forming mist type dynamic random access memory cell Method of forming mist type dynamic random access memory cell

1990-12-28

1993-03-23

Thomas, Tom

Fishing, trapping, and vermin destroying

437 47, 437 48, 437 60, 437203, 437919, H01L 2170

Patent

active

051963639

ABSTRACT:
A dynamic random access memory cell having a mixed trenched stacked capacitor, and a formation process thereof are disclosed. According to the present invention, the punch-through phenomenon is prevented by providing a difference between the trench depths of the trenched capacitors. Further, the insufficient capacitance of the capacitor having a shallower trench is compensated by making the area of the electrode of the stacked capacitor larger than the area of the electrode of the stacked capacitor of the memory cell having a deeper trenched capacitor. Thus, the coupling phenomenon liable to occur between the stacked capacitors can be prevented, thereby providing a DRAM cell applicable to ultra large scale integrated circuit.

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patent: 4912535 (1990-03-01), Okumura
patent: 4951175 (1990-08-01), Kurosawa et al.
patent: 5011788 (1991-04-01), Kawaji et al.
patent: 5066608 (1991-11-01), Kim et al.
patent: 5077232 (1991-12-01), Kim et al.
Watanabe et al., "Stacked Compacitor Cells for High Density Dynamic RAMs", IEDM 88, pp. 600-603.
S. Inoue et al., "A Spread Stacked Capacitor (SSC) Cell for 64 Mbit DRAMs", IEDM, 1989, pp. 31-34.

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