Plasma taper etching for semiconductor device fabrication

Details Plasma taper etching for semiconductor device fabrication Plasma taper etching for semiconductor device fabrication

1991-09-23

1993-10-19

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156345, 156656, 156657, 1566591, H01L 21306, B44C 122, C03C 1500, C23F 100

Patent

active

052542149

ABSTRACT:
A plasma processing apparatus has a chamber which houses therein a plasma processing region and a plasma generating region spaced therefrom. An object such as a semiconductor wafer, which has surface irregularities including lands, is placed in the plasma processing region. When a plasma is generated in the plasma generating region with a processing gas composed mainly of an argon gas being introduced into the chamber, the corner edges of the lands of the object are etched into a taper shape, and the material etched away from the object is deposited between the lands.

REFERENCES:
patent: 4952274 (1990-08-01), Abraham
Collected 8-page (pp. 375-380) Papers of "Lectures in The Symposium of Semiconductors/Integrated Circuits Techniques", published on May 20, 1979 by The Electrochemical Society of Japan, Electronic Materials Committee.
Japanese Patent Kokai (Laid-Open) Publication No. 63-260030, published on Oct. 27, 1988.

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