Method for forming crystals

Details Method for forming crystals Method for forming crystals

1991-09-13

1993-10-19

Kunemund, Robert

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156622, 156624, 156DIG69, 156DIG98, 437241, C30B 1906

Patent

active

052542114

ABSTRACT:
A method of forming a crystal comprises a crystal forming treatment effected by dipping a substrate having a nonnucleation surface having a small nucleation density and a nucleation surface having a larger nucleation density than said nonnucleation surface and an area sufficiently fine to such an extent as to allow only a single nucleus to be formed in a solution containing a monocrystal forming material to thereby allow a monocrystal to grow from only the single nucleus.

REFERENCES:
patent: 3341361 (1967-09-01), Gorski
patent: 3993533 (1976-11-01), Milnes
patent: 4077817 (1979-03-01), Bellavance
patent: 4211821 (1980-07-01), Hadni
patent: 4251299 (1981-02-01), Baliga et al.
patent: 4371421 (1983-02-01), Fan et al.
patent: 4547230 (1985-10-01), Hawrylo
patent: 4549913 (1985-10-01), Hayafuji et al.
1046 Journal of the Electrochemical Society, 132, (1985), Nov., No. 11, Manchester, N.H., U.S.A., "Lateral Epitaxial Growth over Oxide" by L. O. Wilson et al.
Brit. J. Appl. Phys., 1967, vol. 18, "Single-Crystal Films of Silicon on Insulators" by J. D. Filby et al.
Thin Solid Films, 124, (1985), 3-10, "Substrate Preparation for Thin Film Deposition--A Survey" by D. M. Mattox.
Japanese Journal of Applied Physics, vol. 16, No. 12, Dec. 1977, pp. 2109-2113.
Girault et al., "Liquid Phase Epitaxy of Silicon at Very Low Temperatures", Journal of Crystal Growth, vol. 37, (1977), pp. 169 to 177.

Affiliated with

Also associated with

Rating

Method for forming crystals does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for forming crystals, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming crystals will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1349188