Method for manufacturing a semiconductor device

Details Method for manufacturing a semiconductor device Method for manufacturing a semiconductor device

1991-07-15

1993-10-19

Kunemund, Robert

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156DIG73, 156DIG89, 437 21, 437101, 437174, 437247, C30B 108

Patent

active

052542084

ABSTRACT:
A semiconductor device is manufactured by the use of a glass substrate which has previously been heated. An amorphous semiconductor layer is formed on the previously heated glass substrate and then crystallized by heat. By virtue of the previous heating, shrink of the glass substrate after the crystallization process is reduced. Accordingly, internal stress is not generated in the crystallized semiconductor layer. The semiconductor device thus manufactured is superior in electrical property.

REFERENCES:
patent: 4214919 (1980-07-01), Young
patent: 4565584 (1986-01-01), Tamura et al.
patent: 4575925 (1986-03-01), Kabara et al.
patent: 4592799 (1986-06-01), Hayafuji
Extended Abstracts of the 20th. Int. Conf. on Solid State Dev. and Materials, (Aug. 24, 1988), Tokyo, pp. 619-620; K. Nakazawa et al.: "Low Temperature Thin Film Transistor Fabricationusing a Polycrystalline Silicon Film Formed from a Fluorinated Silicon Film".
IEEE Electron Device Letters, vol. 11, No. 6, (Jun. 1990), New York, U.S., pp. 258-260; Hiroshi Kanoh et al.: "Amorphous-Silicon/Silicon-Nitride Thin-Film Transitors Fabricated by Plasma-Free (Chemical Vapor Deposition) Method".

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