Method for forming diamond films by vapor phase synthesis

Details Method for forming diamond films by vapor phase synthesis Method for forming diamond films by vapor phase synthesis

1992-07-06

1994-10-25

Beck, Shrive

Coating processes

Direct application of electrical, magnetic, wave, or...

Plasma

427249, 4272553, B05D 306, C23C 1650

Patent

active

053587545

ABSTRACT:
A method for forming diamond films by vapor phase synthesis comprising a process of forming the diamond films on a substrate by direct current discharge plasma, in an atmosphere of a reaction gas including a gas containing at least carbon and hydrogen, or in an atmosphere of a mixed gas containing at least a carbon-containing gas and a hydrogen gas, at a gas pressure between 0.1 and 5 Torr and a substrate temperature between 300.degree. and 1000.degree. C.

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Patent Abstracts of Japan, vol. 14, No. 337 (C-748), Aug. 15, 1990, & JP-A-2-138-469, May 28, 1990, Yuichi Ishikawa, et al., "Material for Vacuum Having Diamond Surface Treatment of This Material for Vacuum Production, of Diamond Film Surface, Vacuum Vessel and Its Parts Formed by Using Material for Vacuum, In-Vacuum Driving Mechanism, Electron Release Source" . . .
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