Process for removing organic material in a patterned manner from

Details Process for removing organic material in a patterned manner from Process for removing organic material in a patterned manner from

1985-09-03

1986-10-14

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156655, 156668, 219121LM, 427 531, 427 541, B44C 122, B29C 1708, C03C 1500, C03C 2506

Patent

active

046170855

ABSTRACT:
A method is provided for removing organic material from an organic film in a patterned manner using ultraviolet light at sufficient power density to effect the patterned ablative photodecomposition of an organic film in the form of a blend of aliphatic and aromatic organic material or a copolymer of chemically combined aliphatic units and aromatic units.

REFERENCES:
patent: 3664899 (1972-05-01), Wright et al.
patent: 4414059 (1983-11-01), Blum et al.
patent: 4417948 (1983-11-01), Mayne-Banton et al.
H. S. Cole, Y. S. Liu & H. W. Philipp, "Dependence of Photoetching Rates of Photoetching Rates of Polymers at 193 nm on Optical Absorption Coefficiencies", General Electric Corporate Research & Development, Schenectady, N.Y. 12301.
M. Latta, R. Moore, S. Rice & K. Jain, "Excimer Laser Projection Photoetching", J. Appl. Phys. 56 (2) (Jul. 15, 1984), pp. 586-588.
K. Jain & R. T. Kerth, "Excimer Laser Projection Lithography", Applied Optics 23 (5) (Mar. 1, 1984), pp. 648-650.
R. T. Miller, "Heatless Laser Etching", IBM Research Highlights, No. 3, (1983), IBM Research Laboratories.
R. Srinivasan & B. Braren, "Ablative Photodecomposition of Polymer Films by Pulsed Far-Ultraviolet (193 nm) Laser Radiation: Dependence of Etch Depth on Experimental Conditions", J. of Polymer Science: Polymer Chemistry Ed., 22 (1984), pp. 2601-2609.
R. Srinivasan, "Microscopic Model for the Ablative Photodecomposition of Polymers by Far-Ultraviolet Radiation (193 nm)", Appl. Phys. Lett. 44 (9) (May 1, 1984), pp. 849-851.

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