Plasma etching methods

Details Plasma etching methods Plasma etching methods

1998-02-12

2000-07-25

Nuzzolillo, Maria

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438712, 438725, 438743, 156643, 204192, 216 67, 216 79, 134 12, 134 13, H01L 2128

Patent

active

06093655&

ABSTRACT:
A plasma etching method includes forming polymer material over at least some internal surfaces of a plasma etch chamber and forming polymer material over at least some surfaces of a semiconductor wafer received within the plasma etch chamber. Substantially all polymer material is plasma etched from the chamber internal surfaces while at least some polymer material remains on the wafer. In another aspect, a semiconductor wafer is positioned on a wafer receiver within a plasma etch chamber. A photoresist layer has previously been formed thereon and has openings formed therethrough. First plasma etching is conducted through openings formed in the photoresist layer with a gas comprising carbon and a halogen to form openings in material on the wafer. A first polymer comprising carbon and the halogen forms over at least some internal surfaces of the plasma etch chamber during the first plasma etching. A second polymer is formed over the wafer and relative to the material openings to mask said material within the openings. After forming the first and second polymers and with the wafer in the chamber, substantially all the first polymer from chamber internal surfaces is plasma etched while the second polymer masks the material within the openings.

REFERENCES:
patent: 4397724 (1983-08-01), Moran
patent: 4436584 (1984-03-01), Bernacki
patent: 4513021 (1985-04-01), Purdes et al.
patent: 5468686 (1995-11-01), Kawamoto
patent: 5514247 (1996-05-01), Shan et al.
patent: 5593540 (1997-01-01), Tomita et al.
patent: 5626775 (1997-05-01), Roberts et al.
patent: 5644153 (1997-07-01), Keller
patent: 5679211 (1997-10-01), Huang
patent: 5679215 (1997-10-01), Barnes et al.
patent: 5681424 (1997-10-01), Saito et al.
patent: 5716494 (1998-02-01), Imai
patent: 5756400 (1998-05-01), Ye et al.
patent: 5780338 (1998-07-01), Jeng et al.
patent: 5788869 (1998-08-01), Dalton et al.
patent: 5817578 (1998-10-01), Ogawa
patent: 5830279 (1998-11-01), Hackenberg
patent: 5843239 (1998-12-01), Shrotriya
patent: 5868853 (1999-02-01), Chen et al.
patent: 5873948 (1999-02-01), Kim
patent: 5879575 (1999-03-01), Tepman et al.
patent: 5950092 (1999-09-01), Figura et al.
patent: 9046835 (1997-10-01), Figura et al.
patent: 9080656 (1998-05-01), Allen, III
patent: 9141775 (1998-08-01), Blalock et al.
Product Bulletin, "TCP.TM. 9100 High-Density Oxide Etch System Productivity Solution For Advanced Oxide Etch", Lam Research Corporation, Fremont, CA, 9 pages (Nov. 04, 1997 or earlier).

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