Method of forming an electrical contact in a substrate

Details Method of forming an electrical contact in a substrate Method of forming an electrical contact in a substrate

1998-12-10

2000-07-25

Meeks, Timothy

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438628, 438637, 438643, 438644, 438648, 438653, 438654, 438656, 438680, 438685, 427255394, C23C 1634

Patent

active

06093638&

ABSTRACT:
A TiN.sub.x layer is formed by disposing a substrate (18) in a chamber (12). A first reactant gas (40) comprising Ti, a second reactant gas (42) and a third reactant gas (44) comprising N are introduced into the chamber (12). By controlling the ratio of the first, second and third reactant gasses (40, 42, 44), TiN.sub.x is deposited onto a surface (28) of the substrate (18), where x is between zero and one.

REFERENCES:
patent: 5462895 (1995-10-01), Chen
patent: 5508066 (1996-04-01), Akahori
Jeong Soo Byun, Chang Reol Kim, Kwan Goo Rha, Jae Jeong Kim and Woo Shik Kim, "TiN/TiS.sub.2 Formation using TiSi.sub.x Layer and Its Feasibilities in ULSI," Jpn. J. Appl. Phys. vol. 34 (1995) pp. 982-986, Rec'd Sep. 12, 1994; Pub. Nov. 19, 1994.
Jeong Soo Byun, Jun Ki Kim, Jin Won Park and Jae Jeong Kim, "W as a Bit Line Interconnection in Capacitor-Over-Bit-Line (COB) Structured Dynamic Random Access Memory (DRAM) and Feasible Diffusion Barrier Layer," Jpn. J. Appl. Phys. vol. 35 (1996) pp. 1086-1089, Part I, No. 2B, Feb. 1996, Rec'd Sep. 19, 1995; Pub. Nov. 9, 1995.

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