Method of making a semiconductor device

Details Method of making a semiconductor device Method of making a semiconductor device

1997-02-28

2000-07-25

Niebling, John F.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438619, 438623, 438624, H04L 214763

Patent

active

060936339

ABSTRACT:
A semiconductor device manufacturing method is provided which can reduce the capacitance between adjacent wires by providing a void between wires, without sacrificing the advantage of the buried wiring method. After successively depositing an interlayer insulation film, a silicon nitride film, and a silicon dioxide film onto a silicon substrate, a wiring groove is formed. Then, after forming a contact hole, a barrier metal and aluminum film are deposited over the entire surface, these being removed from areas other than within the groove, so as to form buried wiring patterns. Then, the silicon dioxide film and silicon nitride films are etched away from areas in which the adjacent wiring space is narrow, thereby exposing the above-noted wiring pattern, after which a second silicon dioxide film is deposited over the entire surface, thereby forming a void in the area in which there is a narrow wiring space between adjacent wires.

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