Dummy patterns for aluminum chemical polishing (CMP)

Details Dummy patterns for aluminum chemical polishing (CMP) Dummy patterns for aluminum chemical polishing (CMP)

1998-01-15

2000-07-25

Everhart, Caridad

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438633, 438692, 438926, H01L 214763

Patent

active

060936312

ABSTRACT:
A method and apparatus is provided for planarizing damascene metallic circuit patterns of a plurality of discrete integrated circuit chips on a metal coated silicon wafer wherein the circuitry on the chips on the wafer are either designed to be within a defined high metal density circuit range and low density metal circuit range and/or to provide dummy circuitry in the damascene process to provide a substantially uniform circuit density over the chip and the wafer surface. It is preferred that each chip on the surface of the wafer be divided into a plurality of regions and that each region be provided with dummy metallization, if necessary, to provide a relatively uniform circuit density in that region and consequently on the wafer surface. The invention also contemplates adding dummy circuitry to the periphery of the wafer in areas which are not formed into chips (chip fragments). The invention also provides semiconductor wafers made using the method and/or apparatus of the invention.

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MRS Bulletin, "Copper-Based Metallization in ULSI Structures", Aug. 1994, pp. 15-18.

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