Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1997-08-19
1999-07-20
Niebling, John F.
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438655, 438664, 438682, 438683, H01L 214763
Patent
active
059267372
ABSTRACT:
A method of using titanium chloride to etchback CVD-Ti on a patterned oxide wafer and the product formed by this process. Titanium is deposited onto a wafer composed of a silicon base and a pattern oxide layer which exposes portions of the silicon. The titanium is deposited onto the wafer by CVD-Ti. The titanium is deposited as metallic Ti on the oxide layer and reacts with the silicon substrate to form titanium silicide. The wafer is then exposed to a flow of titanium tetrachloride (TiCl.sub.4) gas. The TiCl.sub.4 etches away the metallic Ti on the oxide layer and does not substantially etch the titanium silicide. Optionally titanium nitride and tungsten may then be deposited on the substrate.
REFERENCES:
patent: 5273588 (1993-12-01), Foster et al.
patent: 5308655 (1994-05-01), Eichman et al.
patent: 5356476 (1994-10-01), Foster et al.
patent: 5434110 (1995-07-01), Foster et al.
patent: 5628829 (1997-05-01), Foster et al.
Ameen Michael S.
Hillman Joseph T.
Leusink Gert
Niebling John F.
Tokyo Electron Limited
Zarneke David A.
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