Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1997-02-19
1999-07-20
Niebling, John F.
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438701, 438720, H01L 214763
Patent
active
059267356
ABSTRACT:
There is disclosed a manufacturing method of highly integrated circuits with thin-film transistors (TFTs) for use as peripheral driver circuitry in active-matrix liquid crystal display (LCD) panel with a pixel array each having a charge transfer control TFT, capable of facilitating formation of contact holes otherwise being difficult in cases where an anode oxide film is formed on gate electrodes of TFTs and lead wires both of which are made of anodizable metal, such as aluminum. The method includes execution of anodization while causing a resist mask to be disposed on part of the lead wire and electrode made of aluminum, thereby partly eliminating formation of the anode oxide film on the lead wire and electrode. At a later step of fabrication, each contact is formed by use of such portion that has no anode oxide film formed thereon. This may allow aluminum to be employed as lead wires while enabling easy fabrication of contacts therefor.
REFERENCES:
patent: 5485019 (1996-01-01), Yamzaki et al.
patent: 5648662 (1997-07-01), Zhang et al.
patent: 5736414 (1998-04-01), Yamaguchi et al.
patent: 5824235 (1998-10-01), Yamazaki et al.
patent: 5849611 (1998-12-01), Yamazaki et al.
Awane Katunobu
Goto Yuugo
Hamada Toshimasa
Teramoto Satoshi
Yamaguchi Naoaki
Lattin Christopher
Niebling John F.
Semiconductor Energy Laboratory Co,. Ltd.
Sharp Kabushiki Kaisha
LandOfFree
Method of forming semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of forming semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming semiconductor device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1331161