Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – Insulated gate formation
Patent
1997-06-17
1999-07-20
Bowers, Charles
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
Insulated gate formation
438591, 438585, 438587, 438981, 438299, 438287, 438283, 438216, 438258, H01L 2170
Patent
active
059267291
ABSTRACT:
A method is provided for use in semiconductor fabrication processes for forming a plurality of gate oxide layers with various predefined thicknesses in mixed-mode or embedded circuits that are formed in a semiconductor substrate. In particular, the gate oxide layers of various predefined thicknesses are formed by means of separated growth, which allows all the gate oxide layers to be each formed in one single step, instead of combining two or more oxide layers as in conventional processes, so that the thicknesses can be more easily controllable to the desired levels. The quality of the thus-formed gate oxide layers can thus be better assured.
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Huang Heng-Sheng
Tsai Meng-Jin
Bowers Charles
Nguyen Thanh
United Microelectronics Corp.
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