Method of fabricating semiconductor device having stacked layer

Details Method of fabricating semiconductor device having stacked layer Method of fabricating semiconductor device having stacked layer

1998-06-02

1999-07-20

Nguyen, Tuan H.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

438157, 438164, H01L 2186

Patent

active

059266996

ABSTRACT:
A method of fabricating a semiconductor device comprises the steps of sequentially forming a first gate electrode and an insulating film over a transparent support substrate, forming a through-hole in the insulating film, forming a semiconductor single crystal silicon thin film over the transparent support substrate by epitaxial growth in the through-hole of the insulating film, forming a transistor element having a channel region formed in the semiconductor single crystal silicon thin film, and forming a second gate electrode over and electrically insulated from the channel region of the transistor element.

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