Fishing – trapping – and vermin destroying
Patent
1993-03-04
1994-09-06
Breneman, R. Bruce
Fishing, trapping, and vermin destroying
437174, 156657, 31323131, 117 92, 117939, H01L 2144
Patent
active
053447921
ABSTRACT:
In semiconductor manufacture, a pulse plasma enhanced chemical vapor deposition (PPECVD) method is provided for depositing a conductive film of low resistivity on a substrate. The PPECVD method is especially suited to the deposition of metal silicides such as TiSi.sub.x on a silicon substrate during contact metallization. The PPECVD method can be carried out in a vacuum reaction chamber of a cold wall CVD reactor. A metal precursor deposition gas such as TiCl.sub.4 is reacted with a silicon source gas such as SiH.sub.4 at a deposition temperature of about 500.degree. C. For generating a pulsed plasma, an rf power supply is coupled to the reaction chamber and to a pulse generator.
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Doan Trung T.
Sandhu Gurtej S.
Breneman R. Bruce
Gratton Stephen A.
Micro)n Technology, Inc.
Paladugu Ramamohan Rao
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