Static RAM having cell transistors with longer gate electrodes t

Details Static RAM having cell transistors with longer gate electrodes t Static RAM having cell transistors with longer gate electrodes t

1997-09-29

2000-03-28

Abraham, Fetsum

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257296, 257297, 257298, 257903, 257904, 257907, 257908, 257909, 365200, 365201, 365226, 365229, H01L 21265

Patent

active

060435402

ABSTRACT:
An SRAM of the present invention has a first load resistor connected between a first power source terminal and a first node, a second load resistor connected between the first power source terminal and a second node, a first drive transistor having a source-drain path connected between the first node and a second power source terminal, and a gate connected to the second node, a second drive transistor having a source-drain path connected between the second node and the second power source terminal, and a gate connected to the first node, a first switching transistor having a source-drain path connected between the first node and a first bit line, and a gate connected to a word line, and a second switching transistor having a source-drain path connected between the first node and a second bit line, and a gate connected to the word line. The first and second drive transistors each has a gate length greater than the gate length of transistors constituting a peripheral circuit other than a sense amplifier circuit and a buffer circuit connected to an external terminal, but smaller than the gate length of the first and second switching transistors.

REFERENCES:
patent: 5274601 (1993-12-01), Kawahara et al.
patent: 5327002 (1994-07-01), Motoyoshi
patent: 5555522 (1996-09-01), Anami et al.
patent: 5607869 (1997-03-01), Yamazaki
patent: 5757215 (1998-05-01), Schuelke et al.
Japanese Office Action dated May 18, 1999 with an English language translation of the pertinent information contained therein.

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