Semiconductor memory device having trench-type capacitor structu

Details Semiconductor memory device having trench-type capacitor structu Semiconductor memory device having trench-type capacitor structu

1997-02-21

2000-03-28

Martin-Wallace, Valencia

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257908, 257305, H01L 27108

Patent

active

060435283

ABSTRACT:
A semiconductor memory device comprises a MOS-type transistor formed on a semiconductor substrate, a capacitor formed in the interior of an opening portion formed in the semiconductor substrate to be adjacent to the MOS-type transistor, the capacitor having a capacitor insulating film formed of a high dielectric film, and a line layer for connecting respective gate electrodes of the MOS-type transistor separated to be island-shaped to prevent from being presented on a region where the opening portion is formed, the line layer formed of a conductive layer different from the gate electrodes in its level.

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