Thin film transistor having a heat sink that exhibits a high deg

Details Thin film transistor having a heat sink that exhibits a high deg Thin film transistor having a heat sink that exhibits a high deg

1998-12-04

1999-11-16

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257 66, 257352, H01L 2701, H01L 2712, H01L 310392

Patent

active

059863064

ABSTRACT:
In forming a pair of impurity regions in an active layer, an intrinsic or substantially intrinsic region having a double-sided comb shape is also formed by using a proper mask. The intrinsic or substantially intrinsic region is composed of a portion that effectively functions as a channel forming region and portions in which a channel is not formed and which function as heat sinks. The heat dissipation effect is improved because the heat sinks are formed by the same material as the channel forming region.

REFERENCES:
patent: 5397904 (1995-03-01), Arney et al.
patent: 5874746 (1999-02-01), Holmberg et al.
patent: 5895935 (1999-04-01), Yamazaki et al.

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