Semiconductor device with an inverse-T gate lightly-doped drain

Details Semiconductor device with an inverse-T gate lightly-doped drain Semiconductor device with an inverse-T gate lightly-doped drain

1998-03-30

1999-11-16

Monin, Jr., Donald L.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257401, 257408, 257900, H01L 2976, H01L 2994

Patent

active

059863056

ABSTRACT:
An ultra-short channel device with an inverse-T gate lightly-doped drain (ITLDD) structure is disclosed. The present invention includes a semiconductor substrate, which includes a top surface; a source region formed in the semiconductor substrate; and a drain region formed in the semiconductor substrate spaced from the source region by a channel region. Further, the present invention also includes an inverse-T shaped silicon region formed over the semiconductor substrate, wherein the inverse-T shaped silicon region is approximately disposed within the area of the channel region; and a sidewall insulating region abutting to a sidewall of the inverse-T shaped silicon region. A first conductive region is formed on the top surface of the inverse-T shaped silicon region, and a second conductive region is formed on the top surface of the source region. Also, a third conductive region is formed on the top surface of the drain region.

REFERENCES:
patent: 5182619 (1993-01-01), Pfiester
patent: 5210435 (1993-05-01), Roth et al.
patent: 5241203 (1993-08-01), Hsu et al.
patent: 5304504 (1994-04-01), Wei et al.
patent: 5739573 (1998-04-01), Kawaguchi et al.
Tiao-Yuan Huang et al., A New LDD Transistor with Inverse-T Gate Structure, IEEE Electron Device Letters, vol. EDL-8, No. 4, Apr. 1987, pp. 151-153.
Mizuki Ono et al., Sub-50 NM Gate Length N-Mosfets with 10 NM Phosphorus Source and Drain Junctions, 1993 IEEE, pp. 119-122.
Hyunsang Hwang et al., Performance and Reliability Optimization of Ultra Short Channel CMOS Device for Giga-bit DRAM Applications, 1995 IEEE, pp. 435-438.

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