Process for etching a semiconductor device using an improved pro

Details Process for etching a semiconductor device using an improved pro Process for etching a semiconductor device using an improved pro

1993-06-29

1994-10-25

Powell, William

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156657, 1566591, 156662, 156904, H01L 21306, B44C 122

Patent

active

053585992

ABSTRACT:
The subject process relates to the etching of a semiconductor device having a re-entrant profile area which causes residual positive photoresist material to remain therewithin after formation of an etch mask of the positive photoresist material. A negative photoresist etch mask is formed on a major surface of the outer conductive film structural layer. The etch mask comprises a plurality of photoresist lines arranged in a predetermined pattern which defines a plurality of spaces therebetween, which in turn expose a plurality of areas of the major surface of the semiconductor device. Substantially all of the negative photosensitive material located within the re-entrant profile area is removed during the etch mask formation process. The exposed areas of the major surface of the outer structural layer can then be etched to form the requisite etch pattern with a chemical etchant system without regard to interference by unwanted residual photoresist material.

REFERENCES:
patent: 4174217 (1979-11-01), Flatley
patent: 4789646 (1988-12-01), Davis
patent: 4826754 (1989-05-01), Bobbio

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