Method of purifying a metal line in a semiconductor device

Details Method of purifying a metal line in a semiconductor device Method of purifying a metal line in a semiconductor device

1997-07-23

2000-03-28

Chang, Joni

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438672, 438681, 438687, 438688, H01L 2170

Patent

active

060431490

ABSTRACT:
A method for forming a metal line of a semiconductor device includes the steps of: forming an insulating film on a semiconductor substrate including a lower layer line; forming a via hole to partially expose the lower layer line by selectively removing the insulating film; forming a first conductivity material layer on the insulating film including the via hole; forming a plug layer by selectively removing the first conductivity material layer so that it remains only in the via hole; performing a resistance-lowering treatment on the plug layer to remove its impurities; and forming a second conductivity material layer on the insulating film including the plug layer to form an upper layer line.

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Complete planarization of via holes with aluminum by selective and nonselective chemical vapor deposition, Kazuo Tsubouchi et al, Research Institute of Electrical Communications, Tohuku University, Katahira 2-1-1, Aoba-ku, Sendai 980, Japan, pp. 1221-1223.

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