Method of fabricating contact plug

Details Method of fabricating contact plug Method of fabricating contact plug

1998-04-16

2000-03-28

Niebling, John F.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438643, 438644, 438648, 438653, 438654, 438656, 438660, 438663, 438672, H01L 214763, H01L 2144

Patent

active

060431482

ABSTRACT:
A method of fabricating a metal plug. On a semiconductor substrate comprising a MOS device, a dielectric layer, and a via hole penetrating though the dielectric layer, a conformal titanium layer is formed on the dielectric layer and the via hole. A low temperature annealing is formed in a nitrogen environment, so that a surface of the titanium layer is transformed into a first thin titanium nitride layer. A conformal second titanium nitride layer is formed on the first thin titanium nitride layer by using collimator sputtering. A metal layer is formed and etched back on the second titanium nitride layer to form a metal plug.

REFERENCES:
patent: 5723362 (1998-03-01), Inoue et al.
patent: 5893749 (1999-04-01), Matumoto

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