Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Grooved and refilled with deposited dielectric material
Patent
1998-07-24
2000-03-28
Fourson, George
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Grooved and refilled with deposited dielectric material
438437, 438790, H01L 21762
Patent
active
060431369
ABSTRACT:
A method for forming a silicon oxide layer. There is first provided a substrate. There is then formed over the substrate a silicon oxide layer, where the silicon oxide layer is formed through an ozone assisted sub-atmospheric pressure thermal chemical vapor deposition (SACVD) method employing an ozone oxidant and a tetra-ethyl-ortho-silicate (TEOS) silicon source material at an ozone:TEOS volume ratio of from about 10:1 to about 14:1. Finally, there is then annealed thermally the substrate within an oxygen containing atmosphere at a temperature of greater than about 1100 degrees centigrade to form from the silicon oxide layer a densified silicon oxide layer. The densified silicon oxide layer formed employing the method is formed with an unexpectedly low shrinkage.
REFERENCES:
patent: 5362526 (1994-11-01), Wang et al.
patent: 5393708 (1995-02-01), Hsia et al.
patent: 5462899 (1995-10-01), Ikeda
patent: 5472904 (1995-12-01), Figura et al.
patent: 5674783 (1997-10-01), Jang et al.
patent: 5702977 (1997-12-01), Jang et al.
patent: 5741740 (1998-04-01), Jang et al.
patent: 5855957 (1999-01-01), Yuan
patent: 5869384 (1999-02-01), Yu et al.
Chen Ying-Ho
Jang Syun-Ming
Yu Chen-Hua
Ackerman Stephen B.
Fourson George
Saile George O.
Szecsy Alek P.
Taiwan Semiconductor Manufacturing Company , Ltd.
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