Method of forming a self-aligned copper diffusion barrier in via

Details Method of forming a self-aligned copper diffusion barrier in via Method of forming a self-aligned copper diffusion barrier in via

1997-05-19

1999-11-16

Niebling, John F.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438627, 438639, 438643, 438653, H01L 21283

Patent

active

059857625

ABSTRACT:
A copper diffusion barrier is formed on the side walls of vias connected to copper conductors to prevent copper diffusion into inter-level dielectric. A thin film of copper diffusion barrier material is deposited on the wafer post via etch. A sputter etch is performed to remove barrier material from the base of via and to remove copper oxide from the copper conductor. The barrier material is not removed from the sidewall during the sputter etch. Thus, a barrier to re-deposited copper is formed on the via sidewalls to prevent copper poisoning of the dielectric.

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