Process for fabricating interconnection of semiconductor device

Details Process for fabricating interconnection of semiconductor device Process for fabricating interconnection of semiconductor device

1995-12-07

1999-11-16

Bowers, Charles

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438632, 438634, 438648, H01L 214763

Patent

active

059857510

ABSTRACT:
A process for fabricating interconnection of a semiconductor device is provided which allows the physical vapor deposition and reflow treatment to be performed in different apparatuses and requires no surface treatment prior to the reflow treatment. The process comprises the steps of forming a metallic interconnection material layer on a substrate by means of physical vapor deposition using a metallic interconnection material; forming an oxidation preventive film on the metallic interconnection material layer; subjecting the metallic interconnection material layer to reflow treatment to form a complete solid solution of the components constituting the oxidation preventive film with those of the metallic interconnection material layer; and patterning the metallic interconnection material layer to form an interconnection.

REFERENCES:
patent: 5591671 (1997-01-01), Kim et al.
patent: 5610099 (1997-03-01), Stevens et al.
patent: 5747361 (1998-05-01), Ouellet

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